Morphological and structural characteristics of homoepitaxial 4H-SiC thin films by chemical vapor deposition using bis-trimethylsilylmethane precursor

High quality 4H-SiC monocrystalline him were homoepitaxially grown on 8.0 d egrees off-oriented (0001) 4H-SiC at a low temperature (1643 K) by metal-or ganic chemical vapor deposition (MOCVD). The correlation between the struct ural properties of the films and the growth parameters, in particular, the substrate temperature, and the flow rate of source material BTMSM, was inve stigated to elucidate the possible benefits of a single precursor on low-te mperature thin film growth. The films were examined by optical microscopy, scanning electron microscopy (SEM), triple crystal X-ray diffractometry (TC D), and photoluminescence. Reciprocal space mapping results of the (0004) B ragg spot showed that the full width at half maximum (FWHM) of the rocking curve of the epilayer grown at 1643 K was 9.3 arcsec, which is extremely lo w as compared with the lowest value reported (13 arcsec). The high film qua lity was confirmed by low-temperature photoluminescence. The homoepitaxial growth condition for high quality monocrystalline 4H-SiC was also suggested in terms of the growth temperature and supersaturation of the source mater ial. (C) 2000 Elsevier Science B.V. All rights reserved.