Transparent conducting films of In2O3-ZrO2, SnO2-ZrO2 and ZnO-ZrO2

The optical transparencies and electrical conductivities of thin films of I n2O3, SnO2 and ZnO mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser depos ition. Indium-zirconium oxide films with a ZrO2 content up to 15 wt.% were conducting and more than 80% transparent from 450-700 nm. As the ZrO2 conte nt increased from 0 to 15 wt.%, the electrical resistivities increased from 1.28 x 10(-3) to 6.48 x 10(-2) Ohm cm; the carrier densities decreased fro m 2.14 x 10(20) to 1.0 x 10(18) cm(-3): and the Hall mobilities decreased f rom 21 to 5 cm(2) V-1 s(-1), all monotonically. The electrical resistivitie s of tin-zirconium oxide increased from 1.65 x 10(-2) to 7.33 x 10(-2) Ohm cm as the ZrO2 content varied between 0 and 5 wt.%, whereas the resistiviti es of the zinc-zirconium oldde varied from 3 x 10(-2) to 3.5 x 10(-1) Ohm c m for ZrO, contents between 0 and 10 wt.%. (C) 2000 Elsevier Science B.V. A ll rights reserved.