Study on (root 3 x root 3)R30 degrees reconstruction of 6H-SiC(0001) surface by Atleed

The result on 6H-SiC(0001)-(root3 x root3) R30 degrees surface obtained by low-energy electron diffraction ( LEED) shows that 1/3 monolayer Si atoms w ere absorbed on T-4 hollow sites and bonded to three Si atoms in the first SiC bilayer with a distance of 0.171nm. The calculation result of ATLEED sh ows that the ratio of three different surface terminations, distinguished b y the stacking fault sequence of SiC bilayers, in the "best-fit structure" obtained bg analysis of 10 non-equivalent normal incidence beam sets is S1: S2:S3 = 15:15:70. The values of average R-VHT = 0.165 and R-p = 0.142 indic ate that the surface growth was consistent with the mechanism of step-flow growth corresponding to total energy minimum.