Asymmetrical coupling double quantum well intermixing induced by combinatorial proton implantation

With combinatorial proton implantation, we obtained several areas with diff erent implantation doses in single wafer of GaAs/AlGaAs asymmetry coupling double quantum well grown by MBE, and studied the optical characteristics w ith photoluminescence (PL) and photo-modulated reflectance(PR). Without rap id thermal annealing, maximum transition energy shift 81 meV was obtained i n single wafer. The diffusion lengths of Al component calculated from error function were larger than that calculated from coefficient of diffusion fo rmula. The interface effect of double quantum well is sensitive to proton i mplantation.