Development of a low-dielectric-constant polymer for the fabrication of integrated circuit interconnect

Citation
Sj. Martin et al., Development of a low-dielectric-constant polymer for the fabrication of integrated circuit interconnect, ADVAN MATER, 12(23), 2000, pp. 1769-1778
Citations number
30
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
09359648 → ACNP
Volume
12
Issue
23
Year of publication
2000
Pages
1769 - 1778
Database
ISI
SICI code
0935-9648(200012)12:23<1769:DOALPF>2.0.ZU;2-8
Abstract
For faster, smaller, and higher performance integrated circuits, a low diel ectric constant insulator is required to replace silicon dioxide. Here the properties of a new dielectric-SiLK resin, a solution of a low-molecular-we ight aromatic thermosetting polymer-are reviewed and examples of its applic ation in the fabrication of interconnect structures, such as the one shown in the Figure, are given.