We report on fabrication of a layer-by-layer photonic crystal using highly
doped silicon wafers processed by semiconductor micromachining techniques.
The crystals, built using (100) silicon wafers, resulted in an upper stop b
and edge at 100 GHz. The transmission and defect characteristics of these s
tructures were found to be analogous to metallic photonic crystals. We also
investigated the effect of doping concentration on the defect characterist
ics. The experimental results agree well with predictions of the transfer m
atrix method simulations. (C) 2001 American Institute of Physics.