Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

Authors
Saito, H Nishi, K Sugou, S
Citation
H. Saito et al., Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates, APPL PHYS L, 78(3), 2001, pp. 267-269
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
3
Year of publication
2001
Pages
267 - 269
Database
ISI
SICI code
0003-6951(20010115)78:3<267:GLARTI>2.0.ZU;2-A
Abstract
InAs quantum dots (QDs) with a high density of 9x10(10) cm(-2) are formed o n InAlGaAs layer/InP (311)B substrates. Lasers having five-period stacked I nAs QD layers are operated in the ground state (lambda approximate to1.6 mu m) at room temperature, and the maximal modal gain of the ground state is m easured to be 20 cm(-1). We obtained a threshold current density of 380 A/c m(2) at room temperature, and observed the temperature-insensitive threshol d current at temperatures from 77 to 220 K. (C) 2001 American Institute of Physics.