Single-hole transistor in a p-Si/SiGe quantum well

Authors
Dotsch, U Gennser, U David, C Dehlinger, G Grutzmacher, D Heinzel, T Luscher, S Ensslin, K
Citation
U. Dotsch et al., Single-hole transistor in a p-Si/SiGe quantum well, APPL PHYS L, 78(3), 2001, pp. 341-343
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
3
Year of publication
2001
Pages
341 - 343
Database
ISI
SICI code
0003-6951(20010115)78:3<341:STIAPQ>2.0.ZU;2-8
Abstract
A single-hole transistor is patterned in a p-Si/SiGe quantum well by applyi ng voltages to nanostructured top gate electrodes. Gating is achieved by ox idizing the etched semiconductor surface and the mesa walls before evaporat ion of the top gates. Pronounced Coulomb blockade effects are observed at s mall coupling of the transistor island to source and drain. (C) 2001 Americ an Institute of Physics.