Evidence for an additional noise source modifying conventional 1/f frequency dependence in sub-mu m metal-oxide-semiconductor field-effect transistors

Flicker noise measurements for n-metal-oxide-semiconductor field-effect tra nsistors have been carried out under a wide range of bias conditions. The e xperiments show excess noise over an ideal 1/f noise spectrum at around 1-1 0 kHz frequency range, which is independent of the drain voltage. The origi n of the additional noise is the Shockley-Read-Hall generation-recombinatio n process occurring near the drain in the channel. Monte Carlo device simul ations confirmed the excess noise origin as well as the observed reduction of its magnitude with increasing gate voltage. (C) 2001 American Institute of Physics.