Titanium dioxide thin films were deposited from titanium tetraisopropoxide
in an oxygen atmosphere by light induced chemical vapor deposition (LICVD),
using a 308 nm XeCl excimer laser We report on the influence of substrate
holder temperature at a low fluence (150 mJ/cm(2)) on the deposition on gla
ss substrates. The growth rate follows an Arrhenius behavior between 120 an
d 210 degreesC, corresponding to an activation energy of the deposition rea
ction of 20 kJ/mol. XRD and Raman spectroscopy detected a mixture of anatas
e and rutile crystals, possibly in an amorphous material. With increasing s
ubstrate temperature, the crystallinity is enhanced and the ratio, anatase/
rutile increases. (C) 2000 published by Elsevier Science B.V.