Crystallinity of titania thin films deposited by light induced chemical vapor deposition

Citation
E. Halary et al., Crystallinity of titania thin films deposited by light induced chemical vapor deposition, APPL SURF S, 168(1-4), 2000, pp. 61-65
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
168
Issue
1-4
Year of publication
2000
Pages
61 - 65
Database
ISI
SICI code
0169-4332(200012)168:1-4<61:COTTFD>2.0.ZU;2-3
Abstract
Titanium dioxide thin films were deposited from titanium tetraisopropoxide in an oxygen atmosphere by light induced chemical vapor deposition (LICVD), using a 308 nm XeCl excimer laser We report on the influence of substrate holder temperature at a low fluence (150 mJ/cm(2)) on the deposition on gla ss substrates. The growth rate follows an Arrhenius behavior between 120 an d 210 degreesC, corresponding to an activation energy of the deposition rea ction of 20 kJ/mol. XRD and Raman spectroscopy detected a mixture of anatas e and rutile crystals, possibly in an amorphous material. With increasing s ubstrate temperature, the crystallinity is enhanced and the ratio, anatase/ rutile increases. (C) 2000 published by Elsevier Science B.V.