Imposed layer-by-layer growth with pulsed laser interval deposition

In order to create crystal structures by depositing consecutive atomic or u nit-cell layers of different materials, a layer-by-layer growth mode is a p rerequisite: nucleation of each next layer may only occur after the previou s layer is completed. We introduced a growth method based on a periodic seq uence: very fast deposition of the amount of material needed to complete on e monolayer followed by an interval in which no deposition takes place and the film can reorganize. This makes it possible to grow in a layer-by-layer fashion in a growth regime (temperature, pressure) when otherwise island f ormation would dominate the growth. Here, we present imposed layer-by-layer growth of homo-epitaxial SrTiO3 as monitored by high-pressure reflection h igh-energy electron diffraction (RHEED) and atomic force microscopy (AFM). (C) 2000 Elsevier Science B.V. All rights reserved.