Laser deposition of thin SiO2 and ITO films

Multicomponent films like ITO (indium tin oxide) and silica (SiO2) can be e fficiently deposited by using the reactive pulsed laser deposition (RPLD) t echnique. We ablated Si, SiO and ITO targets in low-pressure O-2 (0.1-5 Pa) with XeCl and KrF laser pulses at fluences of 5-8 J/cm(2). The films were deposited on Si[100] substates at temperatures of 20-600 degreesC. The subs trate was generally see parallel to the target. To reduce droplet depositio n, some films were deposited in off-axis configuration or using the so-call ed "eclipse method", characterized by a shadow mask between target and subs trate. Dense, continuous ITO films with resistivity as low as 1.6 ic 10(-4) Omega cm and a high transparency in the visible region were deposited. Ult ra-thin (similar to6 nm) films were successfully used as electrodes in opto electronic devices. Dense, stoichiometric, thick (>2 mum) SiO2 films were d eposited on substrates at room temperature. Droplet density and surface rou ghness are kept quite low (similar to5 nm). (C) 2000 Elsevier Science B.V. All rights reserved.