Excimer-laser induced chemical etching of transition metals

A photochemical etching system that allowed excimer-laser (193 nm) etching of various metals to be performed in an O-2 atmosphere in the direct writin g mode is described. Etch-rate measurements as a function of laser power an d O-2 partial pressure were obtained for a molybdenum rapid etching process , by the production of volatile metal oxides such as MoO3. Analysis of the etch rates revealed the influence of oxygen partial pressure. Surface morph ology studies using Tencor profilometry were undertaken to determine the re sults of the etching process, Post processing chemical treatment of samples was used to aid removal of surface debris, (C) 2000 Elsevier Science B.V. All rights reserved.