D. Raabe, Yield surface simulation for partially recrystallized aluminum polycrystals on the basis of spatially discrete data, COMP MAT SC, 19(1-4), 2000, pp. 13-26
The paper presents simulations of the yield surface evolution of plasticall
y deformed aluminum polycrystals during recrystallization. The yield surfac
es are calculated using a viscoplastic Taylor-Bishop-Hill strain rate polyc
rystal homogenization method. The input data for the yield surface calculat
ions are the crystal orientations, their volume fractions, and their shear
stresses, While the crystal orientations determine the kinematic portion of
the yield surface the threshold shear stress of each individual orientatio
n determines the kinetic portion of the yield surface. The input data for t
he homogenization calculations are generated through a spatially discrete s
imulation, where crystal deformation and primary static partial recrystalli
zation are simulated by coupling a viscoplastic crystal plasticity finite e
lement model with a cellular automaton. The crystal plasticity finite eleme
nt model accounts for crystallographic slip and for crystal rotation during
plastic deformation using space and time as independent variables and the
crystal orientation and the accumulated slip as dependent variables. The ce
llular automaton uses a switching rule which is formulated as a probabilist
ic analogue of Turnbull's rate equation for the motion of grain boundaries.
The actual decision about a switching event is made using a simple-samplin
g Monte Carlo step. The automaton uses space and time as independent variab
les and the crystal orientation and a stored energy measure as dependent va
riables. The kinetics produced by the switching algorithm are scaled throug
h grain boundary mobility and driving force data. The crystallographic text
ure and the orientation-dependent resistance to shear are for each interpol
ation point extracted after each time step during recrystallization. The da
ta serve as input for the calculation of discrete yield surfaces, (C) 2000
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