Dislocation subsystem stability in f.c.c. materials under intensive loading

Authors
Popov, LE Kolupaeva, SN Vihor, NA
Citation
Le. Popov et al., Dislocation subsystem stability in f.c.c. materials under intensive loading, COMP MAT SC, 19(1-4), 2000, pp. 158-165
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
COMPUTATIONAL MATERIALS SCIENCE
ISSN journal
09270256 → ACNP
Volume
19
Issue
1-4
Year of publication
2000
Pages
158 - 165
Database
ISI
SICI code
0927-0256(200012)19:1-4<158:DSSIFM>2.0.ZU;2-I
Abstract
Dislocation kinetics in f.c.c. crystals being deformed under conditions of (1) constant excessive stress tau (dyn), (2) constant applied deforming str ess tau and (3) constant load was investigated. It was shown that there are two stationary states of dislocation density rho ((1))(s) and rho ((2))(s) (for single crystals p(s)((1)) = 0). The domain between these two stationa ry states corresponds to dynamic softening of deforming crystal. The last r egion corresponds to strain hardening. (C) 2000 Elsevier Science B.V. All r ights reserved.