This paper reviews high pressure investigations of the physical properties
of group III nitrides. After presenting the most important results of high
pressure research in this field, we focus on the problem of donors and acce
pters in GaN and AlGaN with the special emphasis on the highly localized el
ectronic states. Oxygen and silicon donors and their resonant localized sta
tes are discussed in detail. Finally the anomaly of the pressure coefficien
t of the energy gap of InGaN, will be considered in the relation to the pec
uliarities of these mixed crystals band structure.