Citation
Pj. Klar et al., Nitrogen-induced band formation in GaNxAs1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance, HIGH PR RES, 18(1-6), 2000, pp. 29-34
Citations number
7
Categorie Soggetti
Physics
Journal title
HIGH PRESSURE RESEARCH
ISSN journal
08957959
→ ACNP
Volume
18
Issue
1-6
Year of publication
2000
Pages
29 - 34
Database
ISI
SICI code
0895-7959(2000)18:1-6<29:NBFIGS>2.0.ZU;2-#
Abstract
GaNxAs1-x samples with x ranging from 0.043% to 2.8% were grown by MOVPE. A
nalysing low-temperature photoluminescence spectra taken under hydrostatic
pressure and room temperature photomodulated reflectance spectra gives stro
ng evidence that the transition from N acting as an isoelectronic impurity
to forming N-induced bands takes place at a N-concentration of about 0.2%.