Study of semiconductor lasers under simultaneous uniaxial stress and hydrostatic pressure

Authors
Hochheimer, HD Widulle, F Held, JT Strehl, G Kotitschke, RT Adams, AR
Citation
Hd. Hochheimer et al., Study of semiconductor lasers under simultaneous uniaxial stress and hydrostatic pressure, HIGH PR RES, 18(1-6), 2000, pp. 41-48
Citations number
9
Categorie Soggetti
Physics
Journal title
HIGH PRESSURE RESEARCH
ISSN journal
08957959 → ACNP
Volume
18
Issue
1-6
Year of publication
2000
Pages
41 - 48
Database
ISI
SICI code
0895-7959(2000)18:1-6<41:SOSLUS>2.0.ZU;2-W
Abstract
We present the design of a device for the simultaneous application of uniax ial stress and hydrostatic pressure. This new apparatus will for the first time allow measurements at constant strain. Results of the simultaneous app lication of uniaxial stress and hydrostatic pressure to a semiconductor las er are presented and discussed.