Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure

Authors
Gryglas, M Przybytek, J Baj, M Henini, M Eaves, L
Citation
M. Gryglas et al., Hydrostatic pressure investigations of resonant tunnelling through X-minimum-related states in a single barrier GaAs/AlAs/GaAs heterostructure, HIGH PR RES, 18(1-6), 2000, pp. 63-67
Citations number
5
Categorie Soggetti
Physics
Journal title
HIGH PRESSURE RESEARCH
ISSN journal
08957959 → ACNP
Volume
18
Issue
1-6
Year of publication
2000
Pages
63 - 67
Database
ISI
SICI code
0895-7959(2000)18:1-6<63:HPIORT>2.0.ZU;2-X
Abstract
We have investigated the resonant tunnelling of electrons through X-valley related states in a single AlAs barrier with Si donor delta -doping. Under high hydrostatic pressure all the peaks observed in the differential conduc tance-voltage (sigma- V) characteristics shift with a pressure rate of -15 meV/kbar, which is expected for X-minima related electronic states.