Hydrostatic-pressure-induced degradation of MBE CdTe/CdMgTe heterostructures grown on GaAs substrate

Citation
D. Wasik et al., Hydrostatic-pressure-induced degradation of MBE CdTe/CdMgTe heterostructures grown on GaAs substrate, HIGH PR RES, 18(1-6), 2000, pp. 95-100
Citations number
2
Categorie Soggetti
Physics
Journal title
HIGH PRESSURE RESEARCH
ISSN journal
08957959 → ACNP
Volume
18
Issue
1-6
Year of publication
2000
Pages
95 - 100
Database
ISI
SICI code
0895-7959(2000)18:1-6<95:HDOMCH>2.0.ZU;2-Z
Abstract
Modulation doped CdTe/Cd1-xMgxTe heterostructures grown on GaAs substrates were studied by means of magnetotransport measurements performed under hydr ostatic pressure, as well as X-ray diffraction and cross-sectional transmis sion electron microscopy completed before and after pressure experiments. W e have shown that hydrostatic pressure leads to the creation of dislocation s in the CdTe/Cd1-xMgxTe structure in the vicinity of the interface between the II-VI structure and the substrate. The dislocation-enhanced internal s tress leads to internal microfractures, resulting in a permanent damage of the heterostructure.