The charge-density-wave transition in Lu5Ir4Si10 under uniaxial pressure

Authors
Giffhorn, M Becker, B Menovsky, AA Mydosh, JA Nieuwenhuys, GJ Ramakrishnan, S Schubert, S Eichler, A
Citation
M. Giffhorn et al., The charge-density-wave transition in Lu5Ir4Si10 under uniaxial pressure, HIGH PR RES, 18(1-6), 2000, pp. 159-163
Citations number
6
Categorie Soggetti
Physics
Journal title
HIGH PRESSURE RESEARCH
ISSN journal
08957959 → ACNP
Volume
18
Issue
1-6
Year of publication
2000
Pages
159 - 163
Database
ISI
SICI code
0895-7959(2000)18:1-6<159:TCTILU>2.0.ZU;2-W
Abstract
An uniaxial pressure cell for low temperature use is described in detail. T hen we present data of the electrical resistance of single crystals of Lu5I r4Si10, which is known to show a charge-density-wave transition around 83 K and to become superconducting near 3.8 K, both phenomena being anticorrela ted under pressure. Since the CDW in Lu5Ir4Si10 is a quasi one-dimensional phenomenon because of a chain-like structure, it responds to uniaxial press ure in a specific way.