Silicide application on gated single-crystal, polycrystalline and amorphous silicon FEAs - Part II: Co silicide

For enhancement and stabilization of electron emission, Co silicides were f ormed from Co, Co/Ti and Ti/Co layers on silicon FEAs, Since Ti prevents ox ygen adsorption on the Co film during silicidation, uniform and smooth Co s ilicide layers can be obtained by depositing Co first and then Ti on silico n tips, followed by rapid annealing, Among Co silicide FEAs, Co silicide fo rmed from Ti/Co bi-layers shows the lowest leakage current, the highest fai lure voltage over 152 V and the largest anode current over 1 mA at the gate voltage of 150 V, Compared with silicon field emitters, the silicide FEAs formed from Ti/Co layers exhibited a significant improvement in maximum emi ssion current, emission current fluctuation and stability, and failure volt age.