Micromachining technology for lateral field emission devices

We demonstrate a range of novel applications of micromachining and microele ctromechanical systems (MEMS) for achieving efficient and tunable field emi ssion devices (FEDs), Arrays of lateral field emission tips are fabricated with submicron spacing utilizing deep reactive ion etch (DRIE), Current den sities above 150 A/cm(2) are achieved with over 150 . 10(6) tips/cm(2). Wit h sacrificial sidewall spacing, electrodes can be placed at arbitrarily clo se distances to reduce turn-on voltages. F-Ve further utilize MEMS actuator s to laterally adjust electrode distances. To improve the integration capab ility of FEDs, we demonstrate batch hump-transfer of working lateral FEDs o nto a quartz target substrate.