Recent developments of high power converters for industry and traction applications

The introduction of new high power devices like integrated gate commutated thyristors (IGCTs) and high voltage insulated gate bipolar transistors (IGB Ts) accelerates the broad use of pulse width modulation (PWM) voltage sourc e converters in industrial and traction applications. This paper summarizes the state-of-the-art of power semiconductors. The characteristics of IGCTs and high voltage IGBTs are described in detail. Both the design and loss s imulations of a two level 1.14 MVA voltage source inverter and a 6 MVA thre e-level neutral point clamped voltage source converter with active front en d enable a detailed comparison of both power semiconductors for high power PWM converters. The design and the characteristics of a commercially availa ble IGCT neutral point clamped PWM voltage source converter for medium volt age drives are discussed. Recent developments and trends of traction conver ters at de mains and ac mains are summarized.