A review of IGBT models

In this paper, insulated gate bipolar transistor (IGBT) models published in the literature are reviewed, analyzed, compared and classified into differ ent categories according to mathematical type, objectives, complexity, accu racy and speed, Features of the different models are listed. Different mode ling criteria are discussed according to various circuit conditions, struct ures, thermal considerations and accuracies. Some problems and trends in IG BT modeling are discussed.