In this paper, insulated gate bipolar transistor (IGBT) models published in
the literature are reviewed, analyzed, compared and classified into differ
ent categories according to mathematical type, objectives, complexity, accu
racy and speed, Features of the different models are listed. Different mode
ling criteria are discussed according to various circuit conditions, struct
ures, thermal considerations and accuracies. Some problems and trends in IG
BT modeling are discussed.