Single-crystalline CoSi2 layer formation by focused ion beam synthesis

The effects of accumulated radiation damage which arise from the excessive current density employed during focused ion beam implantation are described . The dwell time during beam scanning significantly influences the focused ion beam synthesis of CoSi2 in Si. At sufficiently low accumulated damage, single-crystalline CoSi2 layers are obtained, similarly to conventional ion implantation. A procedure is described which enables the reduction of radi ation damage induced by a focused ion beam to the level of conventional ion implantation. This is of importance for the formation of single-crystallin e CoSi2 layers.