Modeling the impact of varied surface topologies on irregular boron diffusion profiles

The relationship between the deep-boron diffusion profile and the surface s hape of a silicon substrate was studied. A heavy degree of surface dependen ce was established. This surface dependence was quantified for a set of spe cific process conditions. A simulator that can model the effects of surface variation was created, and found to be remarkably successful for both two- and three-dimensional simulations.