Strongly adhering and thick highly tetrahedral amorphous carbon (ta-C) thin films via surface modification by implantation

Citation
M. Chhowalla et Gaj. Amaratunga, Strongly adhering and thick highly tetrahedral amorphous carbon (ta-C) thin films via surface modification by implantation, J MATER RES, 16(1), 2001, pp. 5-8
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF MATERIALS RESEARCH
ISSN journal
08842914 → ACNP
Volume
16
Issue
1
Year of publication
2001
Pages
5 - 8
Database
ISI
SICI code
0884-2914(200101)16:1<5:SAATHT>2.0.ZU;2-D
Abstract
Highly tetrahedral amorphous carbon thin films have exceptional mechanical properties that make them ideal for many challenging wear applications such as protective overcoats for orthopaedic prostheses and aerospace component s. However, the use of ta-C in many wear applications is limited due to the poor adhesion and the inability to grow thick films because of the large c ompressive stress. Here we report on a simple modification of the substrate growth surface by 1-keV ion bombardment using a cathodic vacuum are (CVA) plasma prior to deposition of ta-C films at 100 eV. The 1-keV C+ ion bombar dment created a thin intermixed layer consisting of substrate and carbon at oms. The generation of the intermixed carbide layer improved the adhesion a nd allowed the growth of thick (several mum) ta-C layers on metallic substr ates.