Gas flow effects on the structure and composition of SiNx/Si/SiNx films prepared by radio-frequency magnetron sputtering

The structure and composition of SiNx/Si/SiNx films were investigated by me ans of x-ray reflectivity, x-ray photoelectron spectroscopy, and atomic for ce microscopy. The three-layer films were prepared by radio-frequency magne tron sputtering under the condition of constant nitrogen flow and the argon flow. It was found that the deposition rate and surface structure of the s ilicon nitride films were mainly determined by the nitrogen flow rather tha n the argon flow. But the composition of the silicon nitride films was cont rolled by the gas flow ratio (F-Ar/F-N2) used during sputtering.