Hf. Lopez et W. Phoomiphakdeephan, Influence of porosity on the high temperature oxidation of a SiC-reinforced Si3N4 ceramic composite, J MATER SCI, 35(23), 2000, pp. 5995-6004
In this work the oxidation kinetics of a porous (21.5% porosity) nitride bo
nded silicon carbide containing 20% SiC was investigated in the temperature
range of 1100-1400 degreesC. Two oxidation stages were found which corresp
onded to (i) a rapid parabolic oxidation rate during short term oxidation e
xposure (0-10 hours), and (ii) a parabolic scale growth after some exposure
time. During short term oxidation a continuous oxide film developed, but i
t was unable to block internal oxidation at the pore channels. An experimen
tal activation energy of 55 kJ/mol was obtained which was attributed to int
ially rapid external and internal oxidation through the open pore network.
After 1-10 hours depending on the actual temperature, closure of the surfac
e pores through oxidation lead to a transition where a continuous SiO2 scal
e grew on the outer sample surface through diffusion. An activation energy
of 132 kJ/mol was associated with this parabolic growth suggesting that inw
ard oxygen diffusion through the SiO2 scale was rate limiting. Metallograph
ic observations indicated severe cracking of the scale developed. This was
attributed to the relatively large shrinkage (approximate to1%) associated
with the beta-alpha cristobalite transformation occurring at temperatures b
elow 250 degreesC. Moreover, X-ray diffraction indicated the presence of cr
istobalite and tridymite, but it was unable to identify a discontinuous pha
se developed beneath the SiO2 scale during oxidation. (C) 2000 Kluwer Acade
mic Publishers.