The effects of the growth parameters of the CdS window layer on the photovoltaic properties of MOCVD-grown CdS/CdTe solar cells

This paper forms part of an ongoing study aimed at producing high-efficienc y polycrystalline photovoltaic cells by a single integrated process using m etal organic chemical vapor deposition (MOCVD). Relationships between CdS g rowth variables, final microstructure and device performance parameters are established. CdTe grain sizes of 3-5 mum diameter can be achieved using Cd S growth temperatures of 275 degreesC or below, even in the absence of nucl eation delay. Short-circuit photocurrent depends on CdS growth temperature and dopant concentration. (C) 2000 Kluwer Academic Publishers.