Emission properties of the Er3+: I-4(11/2) -> I-4(13/2) transition in Er3+- and Er3+/Tm3+-doped Ge-Ga-As-S glasses

Citation
Yg. Choi et al., Emission properties of the Er3+: I-4(11/2) -> I-4(13/2) transition in Er3+- and Er3+/Tm3+-doped Ge-Ga-As-S glasses, J NON-CRYST, 278(1-3), 2000, pp. 137-144
Citations number
32
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF NON-CRYSTALLINE SOLIDS
ISSN journal
00223093 → ACNP
Volume
278
Issue
1-3
Year of publication
2000
Pages
137 - 144
Database
ISI
SICI code
0022-3093(200012)278:1-3<137:EPOTEI>2.0.ZU;2-6
Abstract
Ge-Ga-As-S glasses were investigated to develop efficient host materials fo r the Er3+:2.7 mum fiber lasers. Ge30Ga1As9S60 and Ge30Ga2As6S62 (all in at .%) glasses show good thermal stability and high rare-earth solubility up t o 0.3 mol%. Mid-infrared emission with a peak wavelength of 2.76 mum and ba ndwidth of similar to 120 nm was observed in Er3+- and Er3+/Tm3+-doped Ge30 Ga2As6S62 glasses. Codoping of Tm3+ significantly reduced the lifetime of t he Er3+ : I-4(13/2) level due to the energy transfer of Er3+ : I-4(13/2) -- > Tm3+ : F-3(4). Thus, the population inversion between the I-4(11/2) and I -4(13/2) levels in Er3+ became possible. In Er3+-doped glasses, the rate of cross-relaxation for the I-4(11/2) level was approximately ii times faster than that for the I-4(13/2) level. (C) 2000 Elsevier Science B.V. All righ ts reserved.