R. Sharangpani et Sp. Tay, Growth and characterization of rapid thermal chlorinated oxides grown using in situ generated HCl, J ELCHEM SO, 148(1), 2001, pp. F5-F8
We present here a rapid thermal processing (RTP) technique that uses in sit
u generated HCl for growing chlorinated oxides. A gas mixture consisting of
oxygen and a benign organic precursor was made to flow over the heated waf
er surface where the gases reacted to generate the HCl at the wafer site. T
his method is a considerable improvement over all of the existing chlorinat
ion techniques because it provides much higher safety, lower contamination
potential, greater process simplicity, and is produced at a lower cost. Our
data on thin oxides shows that in situ chlorination provides benefits that
are similar to those of conventional chlorination methods, namely, oxides
with lower interface states and higher growth rates than those of standard
dry oxides. Secondary ion mass spectrometry plots show that no carbon is in
troduced in the chlorinated oxide even though it is grown directly in the p
resence of an organic precursor.w Other electrical data demonstrates no deg
radation in leakage current and charge trapping through chlorination. (C) 2
000 The Electrochemical Society. S0013-4651 (00)04-005-2. All rights reserv
ed.