CRITICAL ANALYSIS OF THE SCHOTTKY BOUNDARY-CONDITION FOR NUMERICAL-SIMULATION OF SCHOTTKY AND MESFET STRUCTURE

A critical analysis of the existing boundary conditions at the Schottk y contact is described. It is supported by the results of simulation a nd comparison with experimental observations. I-V measurements on the CrSi2-Si Schottky structure were carried out to investigate the contri bution of tunneling current to the total current. It is found that at room temperature this effect can be neglected. Boundary conditions bas ed on a revised current flow theory through the Schottky junction seem s to be the best choice for modeling and simulation of electrical char acteristics of Schottky diode and MESFET gate structure. Using them go od agreement between simulated and experimental I-V characteristics wa s obtained. The significant conclusion of this work is that the contri bution of hole current density through the reverse biased Schottky jun ction cannot be neglected.