Electronic transport properties of quasicrystalline thin films

Citation
R. Haberkern et al., Electronic transport properties of quasicrystalline thin films, MAT SCI E A, 294, 2000, pp. 475-480
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING
ISSN journal
09215093 → ACNP
Volume
294
Year of publication
2000
Pages
475 - 480
Database
ISI
SICI code
0921-5093(200012)294:<475:ETPOQT>2.0.ZU;2-G
Abstract
We focus on the question if electronic transport properties of quasicrystal s can be understood by a Hume-Rothery like interaction between the atomic s tructure and the electronic system. Therefore, we report about composition and temperature dependent investigations of the electrical conductivity, th e thermopower and the Hall effect of quasicrystalline films, mainly for i-A l-Pd-Re and i-Al-Cu-Fe and compare it to the amorphous counterparts which a re known to be electronically stabilized and are much simpler to understand due to their isotropy. Thin films provide the possibility to measure the thermopower and the Hall effect at elevated temperatures up to 1000 K. Both indicate a strongly incr easing charge-carrier density as a function of temperature. (C) 2000 Elsevi er Science B.V. All rights reserved.