C. Beeli et al., Relationship of phason strain and electronic properties in icosahedral Al-Pd-(Re,Mn) and Al-Cu-Os, MAT SCI E A, 294, 2000, pp. 531-534
Single-phase icosahedral Al70.5Pd21 (Re,Mn)(8.5) and Al65Cu20Os15 samples h
ave been studied in order to find a relationship between electronic localiz
ation and structural properties of icosahedral quasicrystals. Annealed at h
igh temperatures (HT), e.g. 940 degreesC, the Al-Pd-Re samples exhibit a be
havior which can be described as nearly localized, while annealed at low te
mperatures (LT), e.g. 600-640 degreesC, localization has been observed. Sim
ilar observations have been made for icosahedral Al-Cu-Os. Accordingly, Al-
Pd-Re and Al-Cu-Os can be considered as model systems for this type of inve
stigation. Performing transmission electron microscopy measurements, we hav
e observed and quantified the phason strain in these samples: For the two m
odel systems the MT-states are closer to a perfect icosahedral state contai
ning some random phason strain, in the LT-states we observed a strongly pha
son-perturbed i-phase. Additionally, the influence of chemical disorder was
studied by the addition of Mn into icosahedral Al-Pd-Re. (C) 2000 Elsevier
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