Electrical and optical properties of boron and nitrogen implanted In2O3 thin films

Electrical and optical properties of In2O3 thin films doped with boron and nitrogen have been studied. Boron and nitrogen ions were implanted into In2 O3 thin films with an energy of 25 and 35 keV, respectively, at doses of 1 x 10(15)-1.6 x 10(16) cm(-2). After implantation the films were annealed fo r 1 h in air and subsequently for 1 h in a vacuum. After the two-step annea ling at 350 degreesC, the electrical resistivity of the boron implanted sam ple with a dose of 4 x 10(15) cm(-2) achieved 4.4 x 10(-4) Omega cm with an averaged optical transmittance of 84% at a wavelength between 380 and 780 nm. On the other hand, for nitrogen implanted samples, the resistivity did not improve by ion implantation but the optical transmittance was unchanged . (C) 2001 Elsevier Science B.V. All rights reserved.