Annealing of europium-implanted silicon by nanosecond ion-beam pulses

Ion implantation into Si(100) was made with Eu+ ions at 25 keV to doses of 1.2 x 10(15) and 1.2 x 10(16) ions cm(2), at a current density of 2 muA cm( 2) at room temperature and the profile distribution of the Eu was measured by Rutherford back-scattering spectroscopy. A reduction of Eu concentration and some distribution of Eu near the Si surface has been made by nanosecon d pulsed ion-beam annealing with an energy density of 0.5 J cm(2). The stud y explores the possibility for activation of rare-earth luminescence within an implanted semiconductor. Luminescence performance was monitored with ca thodoluminescence spectroscopy at room temperature. Discussions of the obse rved modifications are presented.