Comparison of the dynamic stress breakdown between oxide and oxy-nitride thin films on silicon

Authors
Citation
N. Novkovski, Comparison of the dynamic stress breakdown between oxide and oxy-nitride thin films on silicon, PHYS ST S-A, 182(2), 2000, pp. R8-R9
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
2
Year of publication
2000
Pages
R8 - R9
Database
ISI
SICI code
0031-8965(200012)182:2<R8:COTDSB>2.0.ZU;2-Z