Detection of crystalline phases in CnInSe(2) films grown by selenisation process

CuInSe2 thin films have been prepared using a two-step process. The process involved the deposition of alternate layers of Cu and In onto molybdenum c oated glass substrates using magnetron sputtering resulting in a Cu11In9 pr ecursor phase, free from inhomogeneous secondary phases, followed by anneal ing in an excess selenium environment at various temperatures ranging from 250 to 450 degreesC to synthesis the compound. This method results in dense ly packed, randomly oriented polycrystalline CuInSe2 films with the chaicop yrite crystal structure with grain size larger than 2.0 mum for annealing t emperatures of 500 degreesC. The layers annealed at 500 degreesC showed nea rly stoichiometric composition with a direct energy band gap of 1.01 eV.