Fowler-Nordheim current oscillations analysis of metal/ultra-thin oxide/semiconductor structures

In this paper we present results concerning the modeling of oscillations in the I-V-g characteristics (V-g < 0), of metal/ultra-thin oxide/semiconduct or (MOS) structures where the oxide thickness is 45 <Angstrom>. From the th eoretical models of the literature we have shown that the modeling of oscil lations cannot be made by using the conduction parameters (metal/ultra-thin oxide interface barrier, prefactor K-1) at low or high electric fields. Ho wever, it requires the determination and a fine analysis at low fields of t he excess current which is due to the presence of defects in the oxide laye r. The oscillations analysis of this excess current enabled us to show on t he one hand a good agreement between the field values corresponding to the theoretical and experimental oscillation extrema. and on the other hand to estimate the defect depth.