Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots

Authors
Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP Nenashev, AV
Citation
Ai. Yakimov et al., Evidence for a negative interband photoconductivity in arrays of Ge/Si type-II quantum dots, PHYS REV B, 62(24), 2000, pp. R16283-R16286
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
24
Year of publication
2000
Pages
R16283 - R16286
Database
ISI
SICI code
0163-1829(200012)62:24<R16283:EFANIP>2.0.ZU;2-N
Abstract
We find that conductivity of stacked arrays of Ge/n-Si quantum dots decreas es under interband optical excitation. The negative photoeffect is explaine d by trapping the mobile electrons in the quantum wells created by the Hart ree potential of holes photoexcited in the dots. A phenomenological theory of the effect is fitted to the data. The obtained electron trap energy, sim ilar to 17 meV, is consistent with the results of self-consistent calculati ons.