Optical transitions in charged CdSe quantum dots

Citation
A. Franceschetti et A. Zunger, Optical transitions in charged CdSe quantum dots, PHYS REV B, 62(24), 2000, pp. R16287-R16290
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
24
Year of publication
2000
Pages
R16287 - R16290
Database
ISI
SICI code
0163-1829(200012)62:24<R16287:OTICCQ>2.0.ZU;2-W
Abstract
Using a many-body approach based on single-particle pseudopotential wave fu nctions, we calculate the dependence of the optical transitions in CdSe nan ocrystals on the presence of "spectator" electrons or holes. We find that ( i) as a result of the different localization of the electron and hole wave functions, the absorption lines shift by as much as 22 meV/unit charge when electrons or holes are loaded into the quantum dot. (ii) The lowest emissi on line is significantly red shifted with respect to the lowest allowed abs orption line. (iii) Trapping of;a "spectator" hole in a surface state is pr edicted to lead to dramatic changes in the absorption spectrum, including t he appearance of new transitions.