Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures

Authors
Barthe, MF Henry, L Corbel, C Blondiaux, G Saarinen, K Hautojarvi, P Hugonnard, E Di Cioccio, L Letertre, F Ghyselen, B
Citation
Mf. Barthe et al., Positron annihilation at proton-induced defects in 6H-SiC/SiC and 6H-SiC/SiO2/Si structures, PHYS REV B, 62(24), 2000, pp. 16638-16644
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
24
Year of publication
2000
Pages
16638 - 16644
Database
ISI
SICI code
0163-1829(200012)62:24<16638:PAAPDI>2.0.ZU;2-3
Abstract
Positron annihilation is used to detect vacancy-related defects in proton-i mplanted and Smart Cut 6H-SiC. The measurement of positron-electron pair mo mentum distribution as a function of depth shows that vacancy-related defec ts produced along the proton track and cavities formed in the region of the hydrogen peak survive in smart cut 6H-SiC even after 1300 degreesC anneali ng.