Magnetic field dependence of the carrier density and magnetization in a bismuth thin film

Citation
Ht. Chu et Dd. Franket, Magnetic field dependence of the carrier density and magnetization in a bismuth thin film, PHYS REV B, 62(24), 2000, pp. 16792-16797
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
24
Year of publication
2000
Pages
16792 - 16797
Database
ISI
SICI code
0163-1829(200012)62:24<16792:MFDOTC>2.0.ZU;2-H
Abstract
The electrons and holes in a bismuth film placed in a transverse magnetic f ield assume three-dimensionally quantized energy spectra. The nonparabolici ty of the conduction band and the unique effective masses result in a pecul iar magnetic field dependence of the thermodynamical quantities in the film (normal to the trigonal axis). In particular, the carrier density and the magnetization exhibit unusual field dependences, quite different from that for an ordinary de Haas-van Alphen effect. Lax's energy-band model for bism uth electrons, and experimental effective masses, with modification to acco unt for the quantum size effect, were used in the evaluations.