Low-field negative magnetoresistance in double-layer structures

Citation
Gm. Minkov et al., Low-field negative magnetoresistance in double-layer structures, PHYS REV B, 62(24), 2000, pp. 17089-17093
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
24
Year of publication
2000
Pages
17089 - 17093
Database
ISI
SICI code
0163-1829(200012)62:24<17089:LNMIDS>2.0.ZU;2-8
Abstract
The weak-localization correction to the conductivity in coupled double-laye r structures is studied both experimentally and theoretically. Statistics o f closed paths have been obtained from the analysis of the magnetic field a nd temperature dependencies of negative magnetoresistance for the magnetic field perpendicular and parallel to the structure plane. The comparison of experimental data with the results of a computer simulation of carrier moti on over two two-dimensional layers with scattering shows that interlayer tr ansitions play a decisive role in the weak localization.