Room temperature single-hole silicon memory

We report the observation of room temperature operation demonstrated by a s ingle-hole silicon memory cell in which the single-hole silicon transistor is used as an electrometer. This memory cell is realized on the basis of th e quantum wire and the quantum dot which are self-assembly formed as a. mul tiple-tunnel junction by short-time diffusion of boron into the Si(100)-waf er. The single-hole device obtained exhibits the Coulomb oscillations and t he memory effects such as the hysteresis in C-V characteristics which are r espectively revealed by varying the gate and drain-source voltage in the pr ocess of the local tunneling spectroscopy measurements.