Room temperature single-hole silicon memory

Citation
Nt. Bagraev et al., Room temperature single-hole silicon memory, PHYS LOW-D, 9-10, 2000, pp. 51-59
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
9-10
Year of publication
2000
Pages
51 - 59
Database
ISI
SICI code
0204-3467(2000)9-10:<51:RTSSM>2.0.ZU;2-2
Abstract
We report the observation of room temperature operation demonstrated by a s ingle-hole silicon memory cell in which the single-hole silicon transistor is used as an electrometer. This memory cell is realized on the basis of th e quantum wire and the quantum dot which are self-assembly formed as a. mul tiple-tunnel junction by short-time diffusion of boron into the Si(100)-waf er. The single-hole device obtained exhibits the Coulomb oscillations and t he memory effects such as the hysteresis in C-V characteristics which are r espectively revealed by varying the gate and drain-source voltage in the pr ocess of the local tunneling spectroscopy measurements.