On 2D magnetoexciton localized by ionized donor in narrow quantum well

The ground state of a 2D magnetoexciton localized on an ionized donor or ac ceptor in the semiconductor narrow quantum well is studied theoretically wi thin the Hartree approach. The magnetic field dependence of position and in tensity of the corresponding photoluminescence peak displays the mutual inf luence of both carriers on their effective confinements and corresponds wel l to experimental data. The role of Coulomb singularity of the confinement is analyzed and compared with the electric field defined planar quantum dot s without singular lateral confinement.