GRADED-CHANNEL INGAAS-INALAS-INP HIGH-ELECTRON-MOBILITY TRANSISTORS

Authors
STREIT DC BLOCK TR WOJTOWICZ M PASCUA D LAI R NG GI LIU PH TAN KL
Citation
Dc. Streit et al., GRADED-CHANNEL INGAAS-INALAS-INP HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 774-776
Citations number
6
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
2
Year of publication
1995
Pages
774 - 776
Database
ISI
SICI code
1071-1023(1995)13:2<774:GIHT>2.0.ZU;2-Z