Mossbauer-effect study of off-center atoms in IV-VI semiconductors

Authors
Bland, J Thomas, MF Virchenko, VA Kuz'min, VS Tkachenko, TM
Citation
J. Bland et al., Mossbauer-effect study of off-center atoms in IV-VI semiconductors, SEMICONDUCT, 35(1), 2001, pp. 14-19
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
1
Year of publication
2001
Pages
14 - 19
Database
ISI
SICI code
1063-7826(2001)35:1<14:MSOOAI>2.0.ZU;2-K
Abstract
PbTeSnSe and GeSnTe compound semiconductors were studied by Sn-119 Mossbaue r spectroscopy in the temperature range from 5 to 240 K. Analysis of temper ature dependences of the quadrupole splitting of Mossbauer spectra measured during a cooling-heating cycle confirmed the presence of off-center atoms in these materials. (C) 2001 MAIK "Nauka/Interperiodica".